Matthias Passlack
91Patents
14h-index
58Co-inventors
87Inventor score
Filing activity: Mar 23, 1994 → Jul 25, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9214555B2 | Barrier layer for FinFET channels | Electricity | 531 | Active |
| US6963090B2 | Enhancement mode metal-oxide-semiconductor field effect transistor | Electricity | 129 | Expired |
| US7119381B2 | Complementary metal-oxide-semiconductor field effect transistor structure having ion implant in only one of the complementary devices | Electricity | 121 | Expired |
| US8288798B2 | Step doping in extensions of III-V family semiconductor devices | Electricity | 98 | Active |
| US5907792A | Method of forming a silicon nitride layer | Emerging Cross-Sectional Technologies | 65 | Expired |
| US5821171A | Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article | Electricity | 31 | Expired |
| US5451548A | Electron beam deposition of gallium oxide thin films using a single high purity crystal source | Electricity | 30 | Expired |
| US5550089A | Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd.sub.3 Ga.sub.5 O.sub.12 source. | Electricity | 23 | Expired |
| US6025281A | Passivation of oxide-compound semiconductor interfaces | Electricity | 22 | Expired |
| US5597768A | Method of forming a Ga.sub.2 O.sub.3 dielectric layer | Emerging Cross-Sectional Technologies | 21 | Expired |
| US8471329B2 | Tunnel FET and methods for forming the same | Electricity | 21 | Active |
| US5665658A | Method of forming a dielectric layer structure | Electricity | 20 | Expired |
| US6030453A | III-V epitaxial wafer production | Electricity | 17 | Expired |
| US8604518B2 | Split-channel transistor and methods for forming the same | Electricity | 15 | Active |
| US5902130A | Thermal processing of oxide-compound semiconductor structures | Electricity | 12 | Expired |
| US9711647B2 | Thin-sheet FinFET device | Electricity | 11 | Active |
| US5945718A | Self-aligned metal-oxide-compound semiconductor device and method of fabrication | Electricity | 11 | Expired |
| US6159834A | Method of forming a gate quality oxide-compound semiconductor structure | Electricity | 9 | Expired |
| US6094295A | Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication | Emerging Cross-Sectional Technologies | 9 | Expired |
| US9412871B2 | FinFET with channel backside passivation layer device and method | Electricity | 8 | Active |
| US5904553A | Fabrication method for a gate quality oxide-compound semiconductor structure | Electricity | 6 | Expired |
| US9368604B1 | Method of removing threading dislocation defect from a fin feature of III-V group semiconductor material | Electricity | 5 | Active |
| US7935620B2 | Method for forming semiconductor devices with low leakage Schottky contacts | Electricity | 4 | Active |
| US9876088B1 | III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof | Electricity | 4 | Active |
| US8916927B2 | Vertical tunnel field effect transistor (FET) | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.