Method of fabricating a silicon carbide vertical MOSFET and device
US5451797A · kind A · utility
19Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 1995 |
| Grant date | Sep 19, 1995 |
| Priority date | — |
| Expiry date | Jan 9, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/148
Abstract
A silicon carbide vertical MOSFET formed on a silicon carbide substrate with portions of epitaxial layers defining the various transistor electrodes, rather than defining the electrodes with implants and diffusion. An opening is formed in some of the epitaxial layers and a conductive layer is formed therein to electrically connect a drain contact on the rear of the substrate to the components on the front of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.