Method of making an integrated circuit microwave interconnect and components
US5453154A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1993 |
| Grant date | Sep 26, 1995 |
| Priority date | — |
| Expiry date | Nov 15, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P3/00
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
An integrated circuit microwave interconnect is formed upon a surface by disposing a dielectric layer over the surface and patterning the dielectric layer to form a dielectric region. The dielectric region is then surrounded by a surrounding metal layer. In one embodiment the surface may be a non-metal upon which a metal layer is disposed prior to disposing the dielectric layer. In this embodiment an additional metal layer is disposed adjoining the first metal surface on both sides of the dielectric region after patterning the layer to form the dielectric region. Thus, the two metal layers thereby form the surrounding metal layer around the dielectric region. The microwave interconnect may be formed upon the surface of the substrate, above the surface of the substrate in a floating configuration, or in a trench within the substrate. An opening may be provided through the surrounding metal layer and a second dielectric region, in communication with the first dielectric region by way of the opening, may be formed. The second dielectric region is also surrounded by metal to provide a three-dimensional microwave interconnect. The dielectric material within the surrounding metal layers …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.