Control of the crystal orientation dependent properties of a film deposited on a semiconductor wafer
US5455197A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1993 |
| Grant date | Oct 3, 1995 |
| Priority date | — |
| Expiry date | Jul 16, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of controlling the crystal orientation dependent properties, such as residual stress, barrier layer effectiveness and resistivity, of reactively sputtered films such as titanium nitride, provide a method of optimizing the design parameters of the deposition apparatus and a method of utilizing the apparatus to produce coated Wafers. A sputtering target is maintained spaced from a wafer with a rotating magnetic field produced by a magnet rotating behind the target. An auxiliary magnet is provided at the wafer to unbalance the target magnetic field and allow ion flux from the plasma to reach the substrate. A film is deposited and the properties of the resulting film measured, particularly, in the case of titanium nitride deposition, the ratio of <200> to <111> crystal orientation, as well as the ratio uniformity. The auxiliary magnet configuration and target to wafer spacing are varied and the ratio remeasured. The variation and measurement are repeated until the ratio and ratio uniformity are achieved. Then the apparatus design is set and wafers manufactured therewith having the desired properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.