Michael S. Ameen
13Patents
11h-index
16Co-inventors
69Inventor score
Filing activity: Jul 16, 1993 → Mar 19, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6161500A | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions | Chemistry; Metallurgy | 739 | Expired |
| US6368987B1 | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions | Chemistry; Metallurgy | 571 | Expired |
| US6274496A | Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturing | Electricity | 354 | Expired |
| US5926737A | Use of TiCl.sub.4 etchback process during integrated CVD-Ti/TiN wafer processing | Electricity | 201 | Expired |
| US5834371A | Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof | Emerging Cross-Sectional Technologies | 82 | Expired |
| US5455197A | Control of the crystal orientation dependent properties of a film deposited on a semiconductor wafer | Electricity | 40 | Expired |
| US6143128A | Apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof | Emerging Cross-Sectional Technologies | 29 | Expired |
| US6093645A | Elimination of titanium nitride film deposition in tungsten plug technology using PE-CVD-TI and in-situ plasma nitridation | Electricity | 29 | Expired |
| US6037252A | Method of titanium nitride contact plug formation | Electricity | 19 | Expired |
| US5972790A | Method for forming salicides | Electricity | 19 | Expired |
| US5989652A | Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications | Electricity | 17 | Expired |
| US6635569B1 | Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus | Chemistry; Metallurgy | 9 | Expired |
| US11170967B2 | Liquid metal ion source | Electricity | 6 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.