Ferroelectric memory
US5455786A · kind A · utility
48Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 1994 |
| Grant date | Oct 3, 1995 |
| Priority date | — |
| Expiry date | Jun 9, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A highly reliable and high speed ferroelectric memory having high degree of integration is provided. In a ferroelectric memory having a plurality of memory cells M1 each constituted by one transistor and one ferroelectric capacitor. In the normal operation, the ferroelectric memory is used as a volatile memory in which a voltage of a storage node ST1 is utilized as the stored information. Both an electric potential at a plate PL1 of the ferroelectric capacitor and a precharge electric potential on a data line DL1(j) are made Vcc/2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.