Yoshinobu Nakagome
99Patents
32h-index
103Co-inventors
91Inventor score
Filing activity: Jul 5, 1984 → Apr 6, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5854636A | Semiconductor IC with a plurality of processing circuits which receive parallel data via a parallel data transfer circuit | Physics | 410 | Expired |
| US5539279A | Ferroelectric memory | Physics | 179 | Expired |
| US4661929A | Semiconductor memory having multiple level storage structure | Physics | 176 | Expired |
| US4999519A | Semiconductor circuit with low power consumption having emitter-coupled logic or differential amplifier | Electricity | 131 | Expired |
| US6628538B2 | Memory module including module data wirings available as a memory access data bus | Electricity | 121 | Expired |
| US4701884A | Semiconductor memory for serial data access | Electricity | 102 | Expired |
| US5526313A | Large scale integrated circuit with sense amplifier circuits for low voltage operation | Physics | 99 | Expired |
| US4942556A | Semiconductor memory device | Physics | 95 | Expired |
| US6359815B1 | Data transmitter | Physics | 89 | Expired |
| US5297097A | Large scale integrated circuit for low voltage operation | Physics | 75 | Expired |
| US5535410A | Parallel processor having decoder for selecting switch from the group of switches and concurrently inputting MIMD instructions while performing SIMD operation | Physics | 72 | Expired |
| US5657273A | Semiconductor device capable of concurrently transferring data over read paths and write paths to a memory cell array | Physics | 70 | Expired |
| US4994688A | Semiconductor device having a reference voltage generating circuit | Emerging Cross-Sectional Technologies | 68 | Expired |
| US6269051A | Semiconductor device and timing control circuit | Physics | 57 | Expired |
| US5272393A | Voltage converter of semiconductor device | Physics | 53 | Expired |
| US6107869A | Semiconductor integrated circuit | Electricity | 51 | Expired |
| US4726021A | Semiconductor memory having error correcting means | Physics | 49 | Expired |
| US5455786A | Ferroelectric memory | Physics | 48 | Expired |
| US5568083A | Semiconductor integrated circuit device having an internally produced operation voltage matched to operation speed of circuit | Physics | 44 | Expired |
| US4958325A | Low noise semiconductor memory | Physics | 44 | Expired |
| US4709350A | Semiconductor memory using multiple level storage structure | Physics | 41 | Expired |
| US5262999A | Large scale integrated circuit for low voltage operation | Physics | 41 | Expired |
| US5384740A | Reference voltage generator | Physics | 40 | Expired |
| US5907867A | Translation lookaside buffer supporting multiple page sizes | Emerging Cross-Sectional Technologies | 37 | Expired |
| US5264743A | Semiconductor memory operating with low supply voltage | Physics | 36 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.