High density EEPROM cell array which can selectively erase each byte of data in each row of the array
US5455790A · kind A · utility
24Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 1994 |
| Grant date | Oct 3, 1995 |
| Priority date | — |
| Expiry date | May 16, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/972
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Each byte of data in a high-density, electrically-erasable, programmable read-only-memory (EEPROM) cell array is selectively erased by forming a plurality of memory cells in each of a plurality of P-wells where the memory cells in each P-well are formed one byte wide by n rows in length. By forming the memory cells in each P-well to be one byte wide by n rows in length, each byte of data can be selectively erased by identifying the corresponding P-well and the row within the P-well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.