Inventor · Palo Alto, CA, US

Michael J. Hart

73Patents
14h-index
60Co-inventors
87Inventor score

Filing activity: Oct 16, 1990 → Apr 20, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US6777978B2 Structures and methods for selectively applying a well bias to portions of a programmable device Electricity 87 Expired
US6621325B2 Structures and methods for selectively applying a well bias to portions of a programmable device Electricity 61 Expired
US5108939A Method of making a non-volatile memory cell utilizing polycrystalline silicon spacer tunnel region Electricity 52 Expired
US5726484A Multilayer amorphous silicon antifuse Electricity 37 Expired
US5970372A Method of forming multilayer amorphous silicon antifuse Electricity 33 Expired
US6268639A Electrostatic-discharge protection circuit Emerging Cross-Sectional Technologies 32 Expired
US5293331A High density EEPROM cell with tunnel oxide stripe Electricity 27 Expired
US8299564B1 Diffusion regions having different depths Electricity 26 Active
US5455790A High density EEPROM cell array which can selectively erase each byte of data in each row of the array Emerging Cross-Sectional Technologies 24 Expired
US5870327A Mixed mode RAM/ROM cell using antifuses Physics 19 Expired
US7504854B1 Regulating unused/inactive resources in programmable logic devices for static power reduction Electricity 18 Active
US8261229B2 Method and apparatus for interconnect layout in an integrated circuit Electricity 15 Active
US9575111B1 On chip detection of electrical overstress events Electricity 15 Active
US6949951B1 Integrated circuit multiplexer including transistors of more than one oxide thickness Electricity 15 Expired
US6645802B1 Method of forming a zener diode Emerging Cross-Sectional Technologies 14 Expired
US6243294A Memory architecture for non-volatile storage using gate breakdown structure in standard sub 0.35 micron process Physics 14 Expired
US6549458B1 Non-volatile memory array using gate breakdown structures Physics 14 Expired
US6522582B1 Non-volatile memory array using gate breakdown structures Physics 13 Expired
US6982451B1 Single event upset in SRAM cells in FPGAs with high resistivity gate structures Electricity 13 Expired
US7109734B2 Characterizing circuit performance by separating device and interconnect impact on signal delay Physics 12 Expired
US7089527B2 Structures and methods for selectively applying a well bias to portions of a programmable device Electricity 11 Expired
US5786240A Method for over-etching to improve voltage distribution Emerging Cross-Sectional Technologies 11 Expired
US9281807B1 Master-slave flip-flops and methods of implementing master-slave flip-flops in an integrated circuit Electricity 10 Active
US6768335B1 Integrated circuit multiplexer including transistors of more than one oxide thickness Electricity 10 Expired
US10976239B1 Systems and methods for determining polarization properties with high temporal bandwidth Physics 9 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.