Synthesis of triisopropylindium diisopropyltelluride adduct and use for semiconductor materials
US5456207A · kind A · utility
348Cited by
4References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 1994 |
| Grant date | Oct 10, 1995 |
| Priority date | — |
| Expiry date | May 16, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Triisopropylindium diisopropyltelluride adduct, ((CH.sub.3).sub.2 CH).sub.3 In:Te(CH(CH.sub.3).sub.2).sub.2 is synthesized and is used as a universal n-type dopant for both II/VI semiconductor materials as well as III/V semiconductor materials is disclosed. This dopant precursor is particularly suited for indium doping of II/V semiconductor materials at low carrier concentrations down to 10.sup.14 cm.sup.-3 and does not exhibit an appreciable memory effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.