Negative working resist material, method for the production of the same and process of forming resist patterns using the same
US5457003A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 1993 |
| Grant date | Oct 10, 1995 |
| Priority date | — |
| Expiry date | Jul 30, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/123
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist material comprises a polysiloxane obtained by hydrolysis and condensation with dehydration of one or more alkoxysilanes having an oxirane ring, or of a mixture of the alkoxysilane(s) having an oxirane ring and one or more alkoxysilanes having no oxirane ring, and an acid generator. The resist material may contain one or more of a spectral sensitizer, an organic polymer having a hydroxyl group or an epoxy compound. Resist patterns are formed by coating an organic polymer on a substrate and then the resist material on the film of the organic polymer to form a two layer resist having a bottom layer of the organic polymer and top layer of the resist material, prebaking, imagewise exposing high radiation, postbaking, and developing the resist with alkaline solutions to remove an unexposed portion of the top layer, and dry etching the bottom layer using the relic of the resist material as a mask. the temperature of the post baking is preferably lower than that of the prebaking.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.