Method for making a thin film transistor
US5459088A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 1994 |
| Grant date | Oct 17, 1995 |
| Priority date | — |
| Expiry date | Aug 9, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
Abstract
A method for making semiconductor thin film transistors (TFTs) having a bottom gate such that the gate electrode is formed of a polysilicon layer with a rugged surface, thereby providing a TFT which has a high on/off current ratio. According to the present invention, a thin film transistor may have a substrate; a gate electrode having a rugged surface formed on the substrate; a gate insulating layer formed on the gate electrode and the substrate; a semiconductor layer formed over the gate insulation layer; impurity regions formed at opposite sides of the gate electrode in the semiconductor layer. A method for making a thin film transistor according to present invention may include the steps of: forming a gate electrode having a rugged surface on a substrate; forming an insulating layer and a semiconductor layer on the substrate and the gate electrode; forming impurity regions at opposite sides of the gate electrode in the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.