Process for production of semiconductor substrate
US5459104A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 19, 1994 |
| Grant date | Oct 17, 1995 |
| Priority date | — |
| Expiry date | Sep 19, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/959
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a process of production of a semiconductor substrate by binding etc. involving the direct polishing of an oxide film with step differences. A silicon oxide film (3) having step differences is formed on at least one surface of an active layer substrate (A). This silicon oxide film (3) is polished by a rigid platen using a polishing agent comprised primarily of cerium oxide. A support substrate (B) is laminated to the bonding face (3a) this obtained to obtain a wafer of a SOI structure. This enables elimination of the polycrystalline silicon layer on the silicon oxide film which had been formed only for bonding purposes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.