Gate turn-off thyristor and power convertor using the same
US5459338A · kind A · utility
5Cited by
2References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1993 |
| Grant date | Oct 17, 1995 |
| Priority date | — |
| Expiry date | Feb 17, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/199
Abstract
A gate turn-off thyristor having a p-emitter layer in the anode side, an n-base layer, a p-base layer and an n-emitter layer in the cathode side. The n-base layer is composed of a first layer portion adjacent to the p-emitter layer, a second layer portion adjacent to the p-base layer and having a lower impurity concentration than the first layer portion, and is constituted by a structure which alters a travelling path of positive holes injected from the p-emitter layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.