Hidekatsu Onose
22Patents
8h-index
27Co-inventors
75Inventor score
Filing activity: Jul 31, 1991 → Sep 28, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5307304A | Semiconductor memory device and method of operation thereof | Electricity | 62 | Expired |
| US6894346B2 | Semiconductor device | Electricity | 31 | Expired |
| US5629888A | Semiconductor memory device and method of operation thereof | Electricity | 28 | Expired |
| US6353236B1 | Semiconductor surge absorber, electrical-electronic apparatus, and power module using the same | Electricity | 22 | Expired |
| US6917054B2 | Semiconductor device | Electricity | 16 | Expired |
| US8508258B2 | Driver circuit for switching device | Electricity | 15 | Active |
| US5936832A | Semiconductor memory device and method of operation thereof | Electricity | 14 | Expired |
| US5652467A | Semiconductor device and package structure therefore and power inverter having semiconductor device | Electricity | 9 | Expired |
| US6566726B1 | Semiconductor device and power converter using the same | Electricity | 8 | Expired |
| US7768066B2 | Semiconductor device and electrical circuit device using thereof | Electricity | 8 | Active |
| US5107307A | Semiconductor device for control of light | Physics | 7 | Expired |
| US5459338A | Gate turn-off thyristor and power convertor using the same | Electricity | 5 | Expired |
| US8816355B2 | Semiconductor device | Electricity | 4 | Active |
| US8049223B2 | Semiconductor device with large blocking voltage | Electricity | 4 | Active |
| US7906796B2 | Bipolar device and fabrication method thereof | Electricity | 3 | Active |
| US9478605B2 | Semiconductor device with similar impurity concentration JTE regions | Electricity | 3 | Active |
| US6940741B2 | Semiconductor memory device and methods of operation thereof | Electricity | 2 | Expired |
| US5635734A | Insulated gate type semiconductor device in which the reliability and characteristics thereof are not deteriorated due to pressing action and power inverter using the same | Electricity | 2 | Expired |
| US8227831B2 | Semiconductor device having a junction FET and a MISFET for control | Electricity | 0 | Active |
| US7256453B2 | Semiconductor device | Electricity | 0 | Expired |
| US9755014B2 | Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depth | Electricity | 0 | Active |
| US6750477B2 | Static induction transistor | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.