Memory element
US5459687A · kind A · utility
27Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1993 |
| Grant date | Oct 17, 1995 |
| Priority date | — |
| Expiry date | Oct 28, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A high performance thin film memory device uses an artificial lattice magnetoresistance effect film, and operable with a low magnetic field and room temperature; and the device has a magnetic film part M, current feed lines R and R' for generating magnetic field for information data writing-in, and an information data readout line S of an artificial lattice magnetoresistance film of a lamination structure of a metallic magnetic thin layers such as Ni--Fe--Co system and a metallic nonmagnetic thin layers such as Cu.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.