Semiconductor optical devices
US5459747A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 1994 |
| Grant date | Oct 17, 1995 |
| Priority date | — |
| Expiry date | Jun 14, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34313
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor optical device includes a first semiconductor layer, and a diffraction grating disposed on the first semiconductor layer. The diffraction grating includes portions of a superlattice layer grown on the first semiconductor layer and including alternatingly arranged second semiconductor layers of a semiconductor material in which mass transport hardly occurs, during growth of other semiconductor layers and third semiconductor layers of a semiconductor material different from the material of the second semiconductor layers. The device includes a fourth semiconductor layer burying the diffraction grating. In this structure, since the second semiconductor layers are included in the diffraction grating, the shape of the diffraction grating is maintained during the vapor phase deposition of the fourth semiconductor layer. Therefore, the thickness, amplitude, and pitch of the diffraction grating that determine the optical coupling constant are controlled with high precision.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.