Hirotaka Kizuki
21Patents
13h-index
26Co-inventors
77Inventor score
Filing activity: Oct 1, 1992 → Oct 5, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5782979A | Substrate holder for MOCVD | Chemistry; Metallurgy | 513 | Expired |
| US5796127A | High electron mobility transistor | Electricity | 207 | Expired |
| US7307490B2 | High frequency switch device | Electricity | 55 | Expired |
| US5948161A | Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface | Electricity | 42 | Expired |
| US5459747A | Semiconductor optical devices | Electricity | 35 | Expired |
| US5539763A | Semiconductor lasers and methods for fabricating semiconductor lasers | Physics | 26 | Expired |
| US6358316B1 | Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure | Electricity | 25 | Expired |
| US5991322A | Semiconductor optical device | Electricity | 23 | Expired |
| US5714006A | Method of growing compound semiconductor layer | Emerging Cross-Sectional Technologies | 23 | Expired |
| US5608749A | Semiconductor laser diode and semiconductor laser diode array including plated heat sink (PHS) electrode | Electricity | 22 | Expired |
| US5316967A | Method for producing semiconductor device | Electricity | 17 | Expired |
| US5426658A | Semiconductor laser including ridge confining buffer layer | Electricity | 16 | Expired |
| US5835516A | Semiconductor laser device and method of fabricating semiconductor laser device | Electricity | 15 | Expired |
| US5602414A | Infrared detector having active regions and isolating regions formed of CdHgTe | Electricity | 10 | Expired |
| US5389798A | High-speed semiconductor device with graded collector barrier | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5541950A | Semiconductor laser including groove having variable dimensions | Electricity | 9 | Expired |
| US5679962A | Semiconductor device and a single electron device | Electricity | 9 | Expired |
| US6096617A | Method of manufacturing a carbon-doped compound semiconductor layer | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5882952A | Semiconductor device including quantum wells or quantum wires and method of making semiconductor device | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5805628A | Semiconductor laser | Electricity | 4 | Expired |
| US6506618B1 | Method of forming a GaInNAs layer | Emerging Cross-Sectional Technologies | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.