Silicide targets for sputtering and method of manufacturing the same
US5460793A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 1994 |
| Grant date | Oct 24, 1995 |
| Priority date | — |
| Expiry date | Apr 7, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12014
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Metal silicide targets are provided for sputtering which have a density of at least 99%, no more than one coarse silicon phase 10 .mu.m or larger in size that appears, per square millimeter, on the sputter surface, and an oxygen content of at most 150 ppm. They are made by a method which comprises finely grinding a synthesized silicide powder, vacuum annealing the finely ground powder in a hot press die without the application of pressure, and thereafter compacting and sintering the compact to a density of at least 99% by hot pressing. Alternatively, the finely ground powder is vacuum annealed as a presintered body at a density ratio of 50 to 75%, and thereafter is compacted and sintered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.