Method for reflowing and annealing borophosphosilicate glass to prevent BPO.sub.4 crystal formation
US5461011A · kind A · utility
1Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 1994 |
| Grant date | Oct 24, 1995 |
| Priority date | — |
| Expiry date | Aug 12, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of reflowing borophosphosilicate glass wherein wafers on a support that holds the wafers upright in spaced parallel relationship are introduced into a furnace. The wafers are heated to a temperature to achieve reflow while a main stream of heated inert gas is flowed over the wafers in a direction perpendicular to the planes of the substrates, while simultaneously an auxiliary stream of heated inert gas is flowed in a direction perpendicular to the main stream to prevent the formation of BPO.sub.4 crystals during reflow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.