SiGe thin film or SOI MOSFET and method for making the same

US5461250A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Joachim Norbert Burghartz · Shrub Oak, US
• Bernard S. Meyerson · Yorktown Heights, US
• Yuan-Chen Sun · Hsinchu, TW

Key dates

• Filing date: Aug 10, 1992
• Grant date: Oct 24, 1995
• Expiry date: Aug 10, 2012

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6748

Abstract

A dual gate thin film or SOI MOSFET device having a sufficiently thin body thickness with one or more semiconductor channel layer(s) sandwiched by semiconductor layers having a different energy band structure to automatically confine carriers to the channel layer(s) without the need for channel grading or modulation doping. Preferred embodiments employ strained layer epitaxy having Si/SiGe/Si or SiGe/Si/SiGe semiconductor layers.