Joachim Norbert Burghartz
19Patents
12h-index
23Co-inventors
78Inventor score
Filing activity: Jul 14, 1988 → May 6, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5998292A | Method for making three dimensional circuit integration | Electricity | 480 | Expired |
| US5461250A | SiGe thin film or SOI MOSFET and method for making the same | Electricity | 272 | Expired |
| US5793272A | Integrated circuit toroidal inductor | Emerging Cross-Sectional Technologies | 181 | Expired |
| US5884990A | Integrated circuit inductor | Emerging Cross-Sectional Technologies | 174 | Expired |
| US6114937A | Integrated circuit spiral inductor | Emerging Cross-Sectional Technologies | 149 | Expired |
| US5818099A | MOS high frequency switch circuit using a variable well bias | Emerging Cross-Sectional Technologies | 127 | Expired |
| US5583059A | Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI | Emerging Cross-Sectional Technologies | 76 | Expired |
| US5656849A | Two-level spiral inductor structure having a high inductance to area ratio | Electricity | 71 | Expired |
| US6054329A | Method of forming an integrated circuit spiral inductor with ferromagnetic liner | Emerging Cross-Sectional Technologies | 55 | Expired |
| US5059544A | Method of forming bipolar transistor having self-aligned emitter-base using selective and non-selective epitaxy | Emerging Cross-Sectional Technologies | 27 | Expired |
| US5936299A | Substrate contact for integrated spiral inductors | Electricity | 22 | Expired |
| US6452413B1 | Signal sensor for rf integrated systems | Physics | 18 | Expired |
| US5994162A | Integrated circuit-compatible photo detector device and fabrication process | Electricity | 12 | Expired |
| US6177806A | Signal sensor for rf integrated systems | Physics | 6 | Expired |
| US7951691B2 | Method for producing a thin semiconductor chip comprising an integrated circuit | Electricity | 3 | Active |
| US8309924B2 | Circuit arrangement and imaging pyrometer for generating light- and temperature-dependent signals | Electricity | 2 | Active |
| US8508038B2 | Method for producing an integrated circuit and resulting film chip | Electricity | 1 | Active |
| US8466037B2 | Method for producing a thin chip comprising an integrated circuit | Electricity | 0 | Active |
| US11257915B2 | Semiconductor element having an enhancement-type transistor structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.