Silicide targets for sputtering and method of manufacturing the same
US5464520A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 1993 |
| Grant date | Nov 7, 1995 |
| Priority date | — |
| Expiry date | Jul 19, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3491
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Silicide targets for sputtering which have an area ratio of silicon phases that appear on the sputter surface of no more than 23%, and a density of at least 99%, with a deformed layer partly removed from the surface to attain a surface roughness of from more than 0.05 .mu.m to 1 .mu.m, preferably with the number of coarse silicon phases at least 10 .mu.m in diameter that appear on the sputter surface being at most 10/mm.sup.2. The reduction of early-stage particle generation, in turn, reduces secondary particle generation, thus realizing the reduction of particle generation at both early stage and stabilized stage. A Si powder having a maximum particle diameter of no more than 20 .mu.m is mixed with a metal powder having a maximum particle diameter of no more than 60 .mu.m, in a rather Si-lower mixing ratio. A silicide powder is synthesized from the mixture and hot pressed, the sintered compact being machined and surface treated for the removal of the deformed layer. The burden of the deformed layer-removal step on the process is light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.