Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate
US5465249A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 26, 1991 |
| Grant date | Nov 7, 1995 |
| Priority date | — |
| Expiry date | Nov 26, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A random access memory (RAM) cell in 6H-SiC having storage times when all bias is removed long enough to be considered nonvolatile. The nonvolatile random access memory (NVRAM) cell comprises a bit line, a charge storage device in silicon carbide, and a transistor in silicon carbide connecting the charge storage device to the bit line. The bipolar NVRAM cell has a bipolar transistor with a base region, an emitter region, and a floating collector region, wherein the charge storage device in the bipolar NVRAM is a p-n junction adjacent the floating collector region of the cell. The metal-oxide-semiconductor (MOS) NVRAM has a MOS field effect transistor (MOSFET) with a channel region, a source region, and a drain region, wherein the charge storage device in the MOS NVRAM is a MOS capacitor adjacent the drain region of the MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.