Index-guided laser on a ridged (001) substrate
US5465266A · kind A · utility
17Cited by
0References
15Claims
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Key dates
| Filing date | Jun 28, 1994 |
| Grant date | Nov 7, 1995 |
| Priority date | — |
| Expiry date | Jun 28, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34326
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Index-guided semiconductor lasers having buried ridge waveguides which use the optical confinement resulting from the bandgap difference between a semiconductor material grown on the top plane of the ridge and a semiconductor material grown on the ridge's sidewalls. Beneficially AlGaInP is OMVPE formed on a ridged (001) GaAs substrate in which a sidewall of the ridge is at an angle of between 5 degrees and the {111} A plane of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.