Semiconductor device and manufacturing method therefor
US5466303A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1995 |
| Grant date | Nov 14, 1995 |
| Priority date | — |
| Expiry date | Mar 24, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/965
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, which can easily form hyper abrupt junction type junction having a desired depletion layer width or transition region width, is disclosed. A silicon oxide film is formed on the mirror polished side surface of a P-type semiconductor substrate. Then, a P-type diffusion layer is formed by means of heat treatment. In this process, impurity concentration distribution is formed in such a way that the impurity concentration distribution can abruptly decrease from the mirror polished side surface of the substrate. Following this, the oxide film is removed by etching, and hyper abrupt type PN junction is obtained by sticking the mirror polished side surface of a high impurity concentration N-type semiconductor substrate and the high impurity concentration diffusion side of the above P-type semiconductor substrate to each other in the same surface direction as that of the above P-type semiconductor substrate. Then, the P-type semiconductor substrate is ground and polished from the non-mirror polished surface side for thinning. Finally, a silicon oxide film is formed on the ground and polished surface side, ions are implanted thereinto and heat treatment is provided th…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.