Hitoshi Yamaguchi
74Patents
17h-index
85Co-inventors
87Inventor score
Filing activity: Mar 19, 1980 → Mar 13, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5032196A | Amorphous alloys having superior processability | Chemistry; Metallurgy | 73 | Expired |
| US6258039A | Respiratory gas consumption monitoring device and monitoring method | Human Necessities | 73 | Expired |
| US5681954A | Piperazine derivatives | Chemistry; Metallurgy | 69 | Expired |
| US6118152A | Semiconductor device and method of manufacturing the same | Electricity | 54 | Expired |
| US5074935A | Amorphous alloys superior in mechanical strength, corrosion resistance and formability | Chemistry; Metallurgy | 49 | Expired |
| US5777365A | Semiconductor device having a silicon-on-insulator structure | Electricity | 47 | Expired |
| US4646651A | Floating apparatus for attractive magnetic floater | Performing Operations; Transporting | 43 | Expired |
| US6525375B1 | Semiconductor device having trench filled up with gate electrode | Electricity | 41 | Expired |
| US5213148A | Production process of solidified amorphous alloy material | Performing Operations; Transporting | 38 | Expired |
| US6753379B1 | Heat activated adhesive | Chemistry; Metallurgy | 32 | Expired |
| US7170119B2 | Vertical type semiconductor device | Electricity | 31 | Expired |
| US5250124A | Amorphous magnesium alloy and method for producing the same | Chemistry; Metallurgy | 27 | Expired |
| US5318641A | Particle-dispersion type amorphous aluminum-alloy having high strength | Chemistry; Metallurgy | 25 | Expired |
| US5874768A | Semiconductor device having a high breakdown voltage | Electricity | 24 | Expired |
| US6836001B2 | Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trench | Electricity | 20 | Expired |
| US4953470A | Attraction type magnetic levitation vehicle system | Performing Operations; Transporting | 19 | Expired |
| US5466303A | Semiconductor device and manufacturing method therefor | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6439514B1 | Semiconductor device with elements surrounded by trenches | Electricity | 17 | Expired |
| US7112519B2 | Semiconductor device manufacturing method | Electricity | 17 | Expired |
| US6696323B2 | Method of manufacturing semiconductor device having trench filled up with gate electrode | Electricity | 15 | Expired |
| US6406982B2 | Method of improving epitaxially-filled trench by smoothing trench prior to filling | Electricity | 15 | Expired |
| US5261762A | Tamping shoe of a vibration rammer | Fixed Constructions | 12 | Expired |
| US7317213B2 | Semiconductor device having super junction structure and method for manufacturing the same | Electricity | 11 | Expired |
| US7928470B2 | Semiconductor device having super junction MOS transistor and method for manufacturing the same | Electricity | 10 | Active |
| US7364971B2 | Method for manufacturing semiconductor device having super junction construction | Electricity | 10 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.