Radio frequency monitor for semiconductor process control
US5467013A · kind A · utility
86Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1993 |
| Grant date | Nov 14, 1995 |
| Priority date | — |
| Expiry date | Dec 7, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A RF sensor for monitoring voltage, current and phase angle of a RF signal being coupled to a plasma reactor. Outputs from the sensor are used to calculate various properties of the plasma. These values are then utilized to characterize the process and/or used to provide feedback for in-situ control of an ongoing plasma process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.