Method of producing a semiconductor structure including a recrystallized film
US5467731A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1994 |
| Grant date | Nov 21, 1995 |
| Priority date | — |
| Expiry date | Oct 13, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02587
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor structure including a semiconductor film formed on a semiconductor substrate body via an insulating film includes: laminating a first insulating film, a first semiconductor film, and a second insulating film on the semiconductor substrate successively; forming stripe-shaped second semiconductor films of predetermined width on the second insulating film arranged periodically at a predetermined interval and covering these second semiconductor films with a third insulating film; performing zone melting recrystallization of the first semiconductor film from one end of the substrate to the opposite end along the stripe direction of the stripe-shaped second semiconductor film; etching the third insulating film and portions of the second insulating film not sandwiched by the first and second semiconductor films; oxidizing portions of the second semiconductor film and the first semiconductor film exposed in the etching step and etching and removing the second insulating film remaining after the previous etching. Thus, a semiconductor substrate including a recrystallized semiconductor film having removed sub-grain-boundaries generated during the zone m…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.