Patent · US Expired

Neutral beam apparatus for in-situ production of reactants and kinetic energy transfer

US5468955A · kind A · utility

64Cited by
13References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 20, 1994
Grant dateNov 21, 1995
Priority date
Expiry dateDec 20, 2014

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05H3/02
  • WIPO fieldChemical engineering
  • WIPO sectorChemistry

Abstract

The discovery that a location exists in a plasma sheath surrounding a plasma near a plasma confining surface where recombination of ions and electrons is favored due to Coulombic interaction is exploited to provide filtration of flux components and enhance neutralization of ions extracted from the plasma. By engineering of the dimensions of apertures in an apertured plate in accordance with plasma conditions and differential pumping, a high quality, high flux neutral beam can be developed wherein the particle energies may be scalable from very low levels below that which causes crystal lattice damage in semiconductor materials to very high levels. The production of a beam of neutral beam of good directivity and well-defined geometry is further exploited to provide predictability in plasma chemistry reactions and to form reactants in-situ for semiconductor processing. In-situ production of minute quantities of hydrofluoric acid for interface tailoring provides a "dry", high vacuum compatible alternative to wet etch processes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.