Control and modification of dopant distribution and activation in polysilicon
US5468974A · kind A · utility
25Cited by
12References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 26, 1994 |
| Grant date | Nov 21, 1995 |
| Priority date | — |
| Expiry date | May 26, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/934
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Dopant distribution and activation in polysilicon is controlled by implanting electrically neutral atomic species which accumulate along polysilicon grain boundaries. Exemplary atomic species include noble gases and Group IV elements other than silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.