Method of forming patterned polyimide films
US5470693A · kind A · utility
105Cited by
8References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 18, 1992 |
| Grant date | Nov 28, 1995 |
| Priority date | — |
| Expiry date | Feb 18, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76804
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing patterned polyimide films using wet development of polyimide precursors through a photoresist mask is disclosed. Low thermal coefficient of expansion (TCE) polyimide patterns are formed by starting with a polyamic acid precursor, typically, that derived from 3,3',4,4'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine (BPDA-PDA). Polyimide patterns are generated with complete retention of the intrinsic properties of the polyimide backbone chemistry and formation of metallurgical patterns in low TCE polyimide dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.