Radio frequency monitor for semiconductor process control
US5472561A · kind A · utility
74Cited by
10References
8Claims
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Assignee
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Key dates
| Filing date | Mar 27, 1995 |
| Grant date | Dec 5, 1995 |
| Priority date | — |
| Expiry date | Mar 27, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A RF sensor for monitoring voltage, current and phase angle of a RF signal being coupled to a plasma reactor. Outputs from the sensor are used to calculate various properties of the plasma. These values are then utilized to characterize the process and/or used to provide feedback for in-situ control of an ongoing plasma process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.