Method for manufacturing tunnel-effect sensors

US5472916A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Emmerich Bertagnolli · Munich, DE
• Markus Biebl · Augsburg, DE

Key dates

• Filing date: Mar 25, 1994
• Grant date: Dec 5, 1995
• Expiry date: Mar 25, 2014

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/978
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

In a method for manufacturing tunnel-effect sensors, a tip (2) composed of the silicon of the substrate (1) is produced on a substrate (1) of silicon with electrically conductively doped regions (4) by oxidation of the silicon using a nitride mask on the surface. Using the planarized oxide layer (5) produced in the oxidation step, a beam (3) of polysilicon that is anchored on the substrate (1) is applied, for example, over the tip (2) as a cooperating electrodes for the utilization of the tunnel effect and is electrically conductively doped. Subsequently, the oxide layer (5) is removed.