Method and apparatus for dry etching
US5474650A · kind A · utility
28Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 7, 1994 |
| Grant date | Dec 12, 1995 |
| Priority date | — |
| Expiry date | Sep 7, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/914
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.