Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET
US5475252A · kind A · utility
26Cited by
7References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 1994 |
| Grant date | Dec 12, 1995 |
| Priority date | — |
| Expiry date | Aug 10, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A process for producing a radiation resistant power MOSFET is disclosed. The gate oxide is formed toward the end of the processing and is not exposed to substantial thermal cycling. Arsenic doping is used in the early part of the process to form the source region, and diffused too slowly to be adversely affected by later thermal cycling process steps. The source region has a relatively high resistance to act as a ballasting resistor to prevent burnout of one of a large number of parallel connected cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.