Power semiconductor device with protective element
US5475258A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 1995 |
| Grant date | Dec 12, 1995 |
| Priority date | — |
| Expiry date | Mar 15, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
Abstract
A semiconductor device has a protective Zener diode formed through an insulation film to a silicon substrate having a power MOSFET formed thereon. The breakdown strength of the insulation film is substantially improved and the withstand voltage of the Zener diode can be set to a high value. A gate plate 11 electrically connected to an outer circumferential part of a p-type diffusion region 104 is installed, and element parts 112a-112c and equipotential plates 113a-133c constituting a Zener diode group 115 are formed. The equipotential plates 113a-133c hold a prescribed potential by Zener diode pairs 114 of the element parts 112a-112c.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.