Naoto Okabe
20Patents
11h-index
15Co-inventors
68Inventor score
Filing activity: Dec 5, 1984 → Apr 3, 1998
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5519245A | Insulated gate bipolar transistor with reverse conducting current | Electricity | 94 | Expired |
| US5510634A | Insulated gate bipolar transistor | Electricity | 34 | Expired |
| US5723882A | Insulated gate field effect transistor having guard ring regions | Electricity | 30 | Expired |
| US5545908A | Vertical type insulated-gate semiconductor device | Electricity | 30 | Expired |
| US6107661A | Semiconductor device and method of manufacturing same | Electricity | 28 | Expired |
| US5169793A | Method of making an insulated gate bipolar transistor having gate shield region | Electricity | 22 | Expired |
| US5475258A | Power semiconductor device with protective element | Electricity | 16 | Expired |
| US5464992A | Insulated gate bipolar transistor provided with a minority carrier extracting layer | Electricity | 14 | Expired |
| US4985743A | Insulated gate bipolar transistor | Electricity | 13 | Expired |
| US5801445A | Semiconductor device and method of manufacturing same | Electricity | 13 | Expired |
| US4653443A | Thermoelectric generating composite functioning apparatus | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5973338A | Insulated gate type bipolar-transistor | Electricity | 8 | Expired |
| US5753943A | Insulated gate type field effect transistor and method of manufacturing the same | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5925911A | Semiconductor device in which defects due to LOCOS or heat treatment are suppressed | Electricity | 7 | Expired |
| US6100140A | Manufacturing method of semiconductor device | Electricity | 6 | Expired |
| US6281546A | Insulated gate field effect transistor and manufacturing method of the same | Electricity | 4 | Expired |
| US5448092A | Insulated gate bipolar transistor with current detection function | Electricity | 4 | Expired |
| US6146947A | Insulated gate type field effect transistor and method of manufacturing the same | Emerging Cross-Sectional Technologies | 3 | Expired |
| US5719412A | Insulated gate bipolar transistor | Electricity | 2 | Expired |
| US6452219B1 | Insulated gate bipolar transistor and method of fabricating the same | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.