Semiconductor IC device having a RAM interposed between different logic sections and by-pass signal lines extending over the RAM for mutually connecting the logic sections
US5477067A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1993 |
| Grant date | Dec 19, 1995 |
| Priority date | — |
| Expiry date | Aug 31, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/903
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a gate array with a RAM which is disposed between first and second logic circuit blocks each of which having plural logic gates, by-pass signal lines which interconnect the logic circuit blocks are disposed so as to extend above the RAM. In order to minimize mutual interference, signal lines, such as word lines of the RAM, formed from a layer which is adjacent to the by-pass signal lines are disposed, with respect to a plan view layout arrangement of the main surface of a chip, so as to intersect the latter at right angles. In addition, interconnection pitches of signal lines in different wiring layers which extend parallel with each other are set so that noises are cancelled in differential sense circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.