Preparation of silicon melt for use in pull method of manufacturing single crystal
US5477805A · kind A · utility
6Cited by
1References
5Claims
0Family size
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Key dates
| Filing date | Dec 7, 1994 |
| Grant date | Dec 26, 1995 |
| Priority date | — |
| Expiry date | Dec 7, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A Si material mixed with Group-V element is melted in a crucible, and then held in a chamber filled with a rare gas at atmospheric pressure of 100 torr. or higher. A rare gas, e.g. Ar, Kr, Xe or Rn, having a large mass or the mixture of Ar with Kr, Xe or Rn may be used as atmospheric gas. The high-pressure atmosphere suppress the evaporation of oxides of Group-V elements from the Si melt, so that the Si melt can be maintained at a high oxygen concentration under a stable condition until the start of pulling operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.