Koji Izunome
18Patents
5h-index
41Co-inventors
66Inventor score
Filing activity: Dec 7, 1994 → Sep 29, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7149341B2 | Wafer inspection apparatus | Physics | 11 | Expired |
| US7250357B2 | Manufacturing method for strained silicon wafer | Electricity | 8 | Expired |
| US7403278B2 | Surface inspection apparatus and surface inspection method | Physics | 6 | Active |
| US5477805A | Preparation of silicon melt for use in pull method of manufacturing single crystal | Chemistry; Metallurgy | 6 | Expired |
| US5700320A | Growth of silicon single crystal having uniform impurity distribution along lengthwise or radial direction | Chemistry; Metallurgy | 5 | Expired |
| US5704974A | Growth of silicon crystal from melt having extraordinary eddy flows on its surface | Chemistry; Metallurgy | 5 | Expired |
| US5683504A | Growth of silicon single crystal | Emerging Cross-Sectional Technologies | 4 | Expired |
| US7193294B2 | Semiconductor substrate comprising a support substrate which comprises a gettering site | Electricity | 3 | Expired |
| US7679730B2 | Surface inspection apparatus and surface inspection method for strained silicon wafer | Electricity | 3 | Active |
| US7060597B2 | Manufacturing method for a silicon substrate having strained layer | Electricity | 3 | Expired |
| US7247583B2 | Manufacturing method for strained silicon wafer | Chemistry; Metallurgy | 2 | Expired |
| US7977219B2 | Manufacturing method for silicon wafer | Electricity | 1 | Active |
| US8476149B2 | Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process | Electricity | 1 | Active |
| US11887845B2 | Method for producing three-dimensional structure, method for producing vertical transistor, vertical transistor wafer, and vertical transistor substrate | Electricity | 0 | Active |
| US12371813B2 | Silicon wafer and method for producing silicon wafer | Electricity | 0 | Active |
| US8399341B2 | Method for heat treating a silicon wafer | Electricity | 0 | Active |
| US8252700B2 | Method of heat treating silicon wafer | Electricity | 0 | Active |
| US8999864B2 | Silicon wafer and method for heat-treating silicon wafer | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.