Method of making an ultra thin dielectric for electronic devices
US5478765A · kind A · utility
28Cited by
17References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 1994 |
| Grant date | Dec 26, 1995 |
| Priority date | — |
| Expiry date | May 4, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High quality, ultra thin (<30 .ANG.) SiO.sub.2 /Si.sub.3 N.sub.4 (ON) dielectric layers have been fabricated by in situ multiprocessing and low pressure rapid-thermal N.sub.2 O-reoxidation (LRTNO) of Si.sub.3 N.sub.4 films. Si.sub.3 N.sub.4 film was deposited on the RTN-treated polysilicon by rapid-thermal chemical vapor deposition (RT-CVD) using SiH.sub.4 and NH.sub.3, followed by in situ low pressure rapid-thermal reoxidation in N.sub.2 O (LRTNO) or in O.sub.2 (LRTO) ambient. Results show that ultra thin (T.sub.ox,eq =.about.29.ANG.) ON stacked film capacitors with LRTNO have excellent electrical properties and reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.