Inventor · Beijing, CN

Jiang Yan

50Patents
8h-index
65Co-inventors
81Inventor score

Filing activity: May 4, 1994 → May 18, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US7298009B2 Semiconductor method and device with mixed orientation substrate Electricity 544 Expired
US8173502B2 Formation of active area using semiconductor growth process without STI integration Electricity 123 Active
US5578848A Ultra thin dielectric for electronic devices and method of making same Emerging Cross-Sectional Technologies 83 Expired
US5478765A Method of making an ultra thin dielectric for electronic devices Emerging Cross-Sectional Technologies 28 Expired
US6864151B2 Method of forming shallow trench isolation using deep trench isolation Electricity 23 Expired
US7651915B2 Strained semiconductor device and method of making same Electricity 13 Active
US7495279B2 Embedded flash memory devices on SOI substrates and methods of manufacture thereof Electricity 11 Active
US7482215B2 Self-aligned dual segment liner and method of manufacturing the same Electricity 9 Active
US8158478B2 Strained semiconductor device and method of making same Electricity 6 Active
US8501500B2 Method for monitoring the removal of polysilicon pseudo gates Electricity 5 Active
US9070744B2 Shallow trench isolation structure, manufacturing method thereof and a device based on the structure Electricity 5 Active
US8759208B2 Method for manufacturing contact holes in CMOS device using gate-last process Electricity 5 Active
US8502299B2 Strained semiconductor device and method of making same Electricity 5 Active
US8530355B2 Mixed orientation semiconductor device and method Electricity 5 Active
US7517767B2 Forming conductive stud for semiconductive devices Electricity 5 Active
US7393746B2 Post-silicide spacer removal Electricity 4 Active
US7186622B2 Formation of active area using semiconductor growth process without STI integration Electricity 4 Expired
US8031532B2 Methods of operating embedded flash memory devices Electricity 3 Active
US7800182B2 Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the same Electricity 3 Active
US7687347B2 Embedded flash memory devices on SOI substrates and methods of manufacture thereof Electricity 3 Active
US8319285B2 Silicon-on-insulator chip having multiple crystal orientations Electricity 3 Expired
US8853024B2 Method of manufacturing semiconductor device Electricity 2 Active
US8541296B2 Method of manufacturing dummy gates in gate last process Electricity 2 Active
US7985642B2 Formation of active area using semiconductor growth process without STI integration Electricity 1 Active
US7786547B2 Formation of active area using semiconductor growth process without STI integration Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.