Ferroelectric capacitor heterostructure and method of making same
US5479317A · kind A · utility
101Cited by
5References
10Claims
0Family size
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Key dates
| Filing date | Oct 5, 1994 |
| Grant date | Dec 26, 1995 |
| Priority date | — |
| Expiry date | Oct 5, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
Abstract
A ferroelectric capacitor heterostructure useful in fabricating high-density, non-volatile memory devices is improved by the interposition of an epitaxially-grown layer of oriented platinum which provides the level of electrical conductivity necessary for incorporation of such devices into integrated circuit structures. The reliability of the ferroelectric capacitor device is further improved by maintaining appropriate oxygenation during the fabrication process to ensure the symmetry of the ferroelectric hysteresis loop and thereby provide optimum control of such significant properties as aging, retention, imprint, and fatigue.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.