Method of manufacturing semiconductor device having a capacitor
US5480826A · kind A · utility
33Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1995 |
| Grant date | Jan 2, 1996 |
| Priority date | — |
| Expiry date | Feb 3, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
Abstract
A semiconductor device includes a capacitor, of which insulator has an improved durability. In the semiconductor device, a capacitor lower electrode 11 of the cylindrical capacitor includes a standing wall portion 11b, which is formed of a polysilicon layer having a large crystal grain diameter (1000 .ANG.-10000 .ANG.).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.