Ferroelectric memory
US5481490A · kind A · utility
68Cited by
1References
28Claims
0Family size
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Key dates
| Filing date | Oct 7, 1994 |
| Grant date | Jan 2, 1996 |
| Priority date | — |
| Expiry date | Oct 7, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
Disclosed is a ferroelectric memory, comprising a semiconductor substrate, a ferroelectric thin film capacitor of a laminate structure formed on the substrate, the laminate structure consisting of a lower electrode, an oxide ferroelectric thin film and an upper electrode, and a protective thin film formed to cover at least the upper surface of the capacitor and consisting essentially of a nitride of aluminum, silicon or titanium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.