Patent · US Expired

Etching method for forming a lead frame

US5481798A · kind A · utility

18Cited by
4References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 13, 1995
Grant dateJan 9, 1996
Priority date
Expiry dateJan 13, 2015

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49222
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A lead frame capable of easily connecting an inner lead to an electrode of a semiconductor element by way of a bump of the inner lead, and a method of manufacturing the lead frame capable of significantly easily forming the bump. A bump forming metal layer is formed on a metal base sheet on an area where each inner lead is to be formed. The inner lead is formed on the bump forming metal layer, and the bump forming metal layer is etched using the inner lead as a mask, thus forming a bump. After that, each outer lead is formed by selective etching of the metal base sheet from the rear surface side.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.