Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process
US5482003A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1993 |
| Grant date | Jan 9, 1996 |
| Priority date | — |
| Expiry date | Jul 6, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/32
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process and structure involving a silicon substrate utilize molecular beam epitaxy (MBE) and/or electron beam evaporation methods and an ultra-high vacuum facility to grow a layup of epitaxial alkaline earth oxide films upon the substrate surface. By selecting metal constituents for the oxides and in the appropriate proportions so that the lattice parameter of each oxide grown closely approximates that of the substrate or base layer upon which oxide is grown, lattice strain at the film/film or film/substrate interface of adjacent films is appreciably reduced or relieved. Moreover, by selecting constituents for the oxides so that the lattice parameters of the materials of adjacent oxide films either increase or decrease in size from one parameter to another parameter, a graded layup of films can be grown (with reduced strain levels therebetween) so that the outer film has a lattice parameter which closely approximates that of, and thus accomodates the epitaxial growth of, a pervoskite chosen to be grown upon the outer film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.