Method for removing etching residue using a hydroxylamine-containing composition
US5482566A · kind A · utility
57Cited by
7References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 14, 1994 |
| Grant date | Jan 9, 1996 |
| Priority date | — |
| Expiry date | Jul 14, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for removing resists and etching residue from substrates using a stripping and cleaning composition containing hydroxylamine and at least one alkanolamine is described. Further, a method for removing etching residue from semiconductor substrates using a cleaning composition containing hydroxylamine, at least one alkanolamine, at least one chelating agent, and water is described. The preferred chelating agent is 1,2-dihydroxybenzene or a derivative thereof. The chelating agent provides added stability and effectiveness to the cleaning composition of the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.