Gettering of unwanted metal impurity introduced into semiconductor substrate during trench formation
US5482869A · kind A · utility
27Cited by
9References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 1, 1994 |
| Grant date | Jan 9, 1996 |
| Priority date | — |
| Expiry date | Mar 1, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After a trench is formed in a semiconductor substrate, a semiconductor film is formed on the inner wall of the trench. Annealing is performed in a predetermined condition to subject an unwanted metal impurity to gettering into the semiconductor film. The semiconductor film is then oxidized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.